<b>Field Effect Transistors</b><p> <author>Created by librarian@cadsoft.de</author><p> <p> Symbols changed according to IEC617<p> All types, packages and assignment to symbols and pins checked<p> Package outlines partly checked<p> <p> JFET = junction FET<p> IGBT-x = insulated gate bipolar transistor<p> x=N: NPN; x=P: PNP<p> IGFET-mc-nnn; (IGFET=insulated gate field effect transistor)<P> m=D: depletion mode (Verdr&auml;ngungstyp)<p> m=E: enhancement mode (Anreicherungstyp)<p> c: N=N-channel; P=P-Channel<p> GDSB: gate, drain, source, bulk<p> <p> by R. Vogg 15.March.2002 <b>TO 220 horizontal</b> >NAME >VALUE A17,5mm 1 2 3 >VALUE >NAME <b>N-Channel Enhancement MOSFET</b> (HEXFET); 100V; 5,6A; 0,54Ohm