STM32_Devel/HARD/Vape_V1/Scheme.s#5

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<library name="transistor-fet">
<description>&lt;b&gt;Field Effect Transistors&lt;/b&gt;&lt;p&gt;
&lt;author&gt;Created by librarian@cadsoft.de&lt;/author&gt;&lt;p&gt;
&lt;p&gt;
Symbols changed according to IEC617&lt;p&gt; 
All types, packages and assignment to symbols and pins checked&lt;p&gt;
Package outlines partly checked&lt;p&gt;
&lt;p&gt;
JFET = junction FET&lt;p&gt;
IGBT-x = insulated gate bipolar transistor&lt;p&gt;
x=N: NPN; x=P: PNP&lt;p&gt;
IGFET-mc-nnn; (IGFET=insulated gate field effect transistor)&lt;P&gt;
m=D: depletion mode (Verdr&amp;auml;ngungstyp)&lt;p&gt;
m=E: enhancement mode (Anreicherungstyp)&lt;p&gt;
c: N=N-channel; P=P-Channel&lt;p&gt;
GDSB: gate, drain, source, bulk&lt;p&gt;
&lt;p&gt;
by R. Vogg  15.March.2002</description>
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<package name="TO220">
<description>&lt;b&gt;TO 220 horizontal&lt;/b&gt;</description>
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<text x="-4.445" y="7.874" size="0.9906" layer="21" ratio="12">A17,5mm</text>
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<deviceset name="IRF510" prefix="Q">
<description>&lt;b&gt;N-Channel Enhancement MOSFET&lt;/b&gt; (HEXFET); 100V; 5,6A; 0,54Ohm</description>
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<device name="" package="TO220">
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<connect gate="G$1" pin="S" pad="3"/>
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<plain>
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